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CATEGORY 3 - ELECTRONICS

3B Test, Inspection and Production Equipment

CATEGORY 3 - ELECTRONICS

3B Test, Inspection and Production Equipment

3B001 Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor:

a. Equipment designed for epitaxial growth as follows:

1. Equipment capable of producing a layer of any material other than silicon with a thickness uniform to less than ± 2,5% across a distance of 75 mm or more;

2. Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, or nitrogen;

3. Molecular beam epitaxial growth equipment using gas or solid sources;

b. Equipment designed for ion implantation and having any of the following:

1. Not used;

2. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant;

3. Direct write capability;

4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or

5. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600°C or greater;

c. Not used;

d. Not used;

e. Automatic loading multi-chamber central wafer handling systems having all of the following:

1. Interfaces for wafer input and output, to which more than two functionally different 'semiconductor process tools' specified in 3B001.a.1., 3B001.a.2., 3B001.a.3 or 3B001.b. are designed to be connected; and

2. Designed to form an integrated system in a vacuum environment for 'sequential multiple wafer processing';

f. Lithography equipment as follows:

1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:

a. A light source wavelength shorter than 193 nm; or

b. Capable of producing a pattern with a 'Minimum Resolvable Feature size' (MRF) of 45 nm or less;

2. Imprint lithography equipment capable of producing features of 45 nm or less;

3. Equipment specially designed for mask making having all of the following:

a. Deflected focussed electron beam, ion beam or "laser" beam; and

b. Having any of the following:

1. A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or

2. Not used;

3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;

4. Equipment designed for device processing using direct writing methods, having all of the following:

a. A deflected focused electron beam; and

b. Having any of the following:

1. A minimum beam size equal to or smaller than 15 nm; or

2. An overlay error less than 27 nm (mean + 3 sigma);

g. Masks and reticles, designed for integrated circuits specified in 3A001;

h. Multi-layer masks with a phase shift layer;

1. Made on a mask "substrate blank" from glass specified as having less than 7 nm/cm birefringence; or

2. Designed to be used by lithography equipment having a light source wavelength less than 245 nm;

i. Imprint lithography templates designed for integrated circuits specified in 3A001.

3B002 Test equipment specially designed for testing finished or unfinished semiconductor devices as follows and specially designed components and accessories therefor:

a. For testing S-parameters of transistor devices at frequencies exceeding 31,8 GHz;

b. Not used;

c. For testing microwave integrated circuits specified in 3A001.b.2.

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