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CATEGORY 3 - ELECTRONICS

 

CATEGORY 3 - ELECTRONICS

3A Systems, Equipment and Components

3A001 Electronic items as follows:

a. General purpose integrated circuits, as follows:

1. Integrated circuits designed or rated as radiation hardened to withstand any of the following:

a. A total dose of 5 × 10E3 Gy (silicon) or higher;

b. A dose rate upset of 5 × 10E6 Gy (silicon)/s or higher; or

c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 x 10E13 n/cm² or higher on silicon, or its equivalent for other materials;

2. "Microprocessor microcircuits", "microcomputer microcircuits", microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, digital-to-analogue converters, electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, electrical erasable programmable read-only memories (EEPROMs), flash memories or static random-access memories (SRAMs), having any of the following:

a. Rated for operation at an ambient temperature above 398 K (125 °C);

b. Rated for operation at an ambient temperature below 218 K (-55 °C); or

c. Rated for operation over the entire ambient temperature range from 218 K (-55°C) to 398 K (125°C);

3. "Microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz;

4. Not used;

5. Analogue-to-Digital Converter (ADC) and Digital-to-Analogue Converter (DAC) integrated circuits, as follows:

a. ADCs having any of the following:

1. A resolution of 8 bit or more, but less than 10 bit, with an output rate greater than 1 000 million words per second;

2. A resolution of 10 bit or more, but less than 12 bit, with an output rate greater than 500 million words per second;

3. A resolution of 12 bit or more, but less than 14 bit, with an output rate greater than 200 million words per second;

4. A resolution of 14 bit or more, but less than 16 bit, with an output rate greater than 250 million words per second; or

5. A resolution of 16 bit or more with an output rate greater than 65 million words per second;

b. Digital-to-Analogue Converters (DAC) having any of the following:

1. A resolution of 10 bit or more with an ‘adjusted update rate’ of greater than 3 500 MSPS; or

2. A resolution of 12 bit or more with an ‘adjusted update rate’ of greater than 1 250 MSPS and having any of the following:

a. A settling time less than 9 ns to 0,024 % of full scale from a full scale step; or

b. A ‘Spurious Free Dynamic Range’ (SFDR) greater than 68 dBc (carrier) when synthesising a full scale analogue signal of 100 MHz or the highest full scale analogue signal frequency specified below 100 MHz.

6. Electro-optical and "optical integrated circuits", designed for "signal processing" and having all of the following:

a. One or more than one internal "laser" diode;

b. One or more than one internal light detecting element; and

c. Optical waveguides;

7. Field programmable logic devices having any of the following:

a. A maximum number of single-ended digital input/outputs of greater than 700 or greater; or

b. An 'aggregate one-way peak serial transceiver data rate' of 500 Gb/s or greater;

8. Not used;

9. Neural network integrated circuits;

10. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:

a. More than 1500 terminals;

b. A typical "basic gate propagation delay time" of less than 0,02 ns; or

c. An operating frequency exceeding 3 GHz;

11. Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having any of the following:

a. An equivalent gate count of more than 3000 (2 input gates); or

b. A toggle frequency exceeding 1,2 GHz;

12. Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N) /20480 ms, where N is the number of points;

13. Direct Digital Synthesizer (DDS) integrated circuits having any of the following:

a. A Digital-to-Analogue Converter (DAC) clock frequency of 3,5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or

b. A DAC clock frequency of 1,25 GHz or more and a DAC resolution of 12 bit or more;

b. Microwave or millimetre wave items as follows:

1. Electronic vacuum tubes and cathodes, as follows:

a. Travelling wave tubes, pulsed or continuous wave, as follows:

1. Tubes operating at frequencies exceeding 31,8 GHz;

2. Tubes having a cathode heater element with a turn on time to rated RF power of less than 3 seconds;

3. Coupled cavity tubes, or derivatives thereof, with a "fractional bandwidth" of more than 7 % or a peak power exceeding 2,5 kW;

4. Helix tubes, or derivatives thereof, having any of the following:

a. An "instantaneous bandwidth" of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5;

b. An "instantaneous bandwidth" of one octave or less, and average power (expressed in kW) times frequency (expressed in GHz) of more than 1; or

c. Being "space-qualified";

b. Crossed-field amplifier tubes with a gain of more than 17 dB;

c. Impregnated cathodes designed for electronic tubes producing a continuous emission current density at rated operating conditions exceeding 5 A/cm²;

2. Microwave "Monolithic Integrated Circuits" (MMIC) power amplifiers that are any of the following:

a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15%, and having any of the following:

1. A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2. A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a "fractional bandwidth" greater than 10%, and having any of the following:

1. A peak saturated power output greater than 10W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or

2. A peak saturated power output greater than 5W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz;

c. Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a "fractional bandwidth" of greater than 10%;

d. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

e. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10%;

f. Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10%;

g. Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5%; or

h. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 90 GHz;

3. Discrete microwave transistors having any of the following:

a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz and having any of the following:

1. A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2. A peak saturated power output greater than 205 W (53,12 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3. A peak saturated power output greater than 115 W (50,61 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4. A peak saturated power output greater than 60 W (47,78 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and having any of the following:

1. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz;

2. A peak saturated power output greater than 15 W (41,76 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz;

3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or

4. A peak saturated power output greater than 7 W (38,45 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz;

c. Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

d. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz;

e. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 43,5 GHz;

4. Microwave solid state amplifiers and microwave assemblies/modules containing microwave solid state amplifiers, that are any of the following:

a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15%, and having any of the following:

1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;

2. A peak saturated power output greater than 270 W (54,3 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;

3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or

4. A peak saturated power output greater than 90 W (49,54 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;

b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz with a "fractional bandwidth" greater than 10%, and having any of the following:

1. A peak saturated power output greater than 70 W (48,54 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz;

2. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz;

3. A peak saturated power output greater than 30 W (44,77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or

4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz;

c. Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;

d. Rated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10%;

e. Rated for operation at frequencies exceeding 43,5 GHz and having any of the following:

1. A peak saturated power output greater than 0,2 W (23 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10%;

2. A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5%; or

3. A peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 90 GHz; or

f. Rated for operation at frequencies above 2,7 GHz and having all of the following:

1. A peak saturated power output (in watts), Psat, greater than 400 divided by the maximum operating frequency (in GHz) squared [Psat>400 W*GHz2/fGHz2];

2. A "fractional bandwidth" of 5 % or greater; and

3. Any two sides perpendicular to one another with either length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d≤ 15cm*GHz/ fGHz];

5. Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (fmax/fmin) in less than 10 µs and having any of the following:

a. A band-pass bandwidth of more than 0,5 % of centre frequency; or

b. A band-stop bandwidth of less than 0,5 % of centre frequency;

6. Not used;

7. Converters and harmonic mixers that are any of the following:

a. Designed to extend the frequency range of "signal analysers" beyond 90 GHz;

b. Designed to extend the operating range of signal generators as follows:

1. Beyond 90 GHz;

2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

c. Designed to extend the operating range of network analysers as follows:

1. Beyond 110 GHz;

2. To an output power greater than 31,62 mW (15 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

3. To an output power greater than 1 mW (0 dBm) anywhere within the frequency range exceeding 90 GHz but not exceeding 110 GHz; or

d. Designed to extend the frequency range of microwave test receivers beyond 110 GHz;

8. Microwave power amplifiers containing tubes specified in 3A001.b.1. and having all of the following:

a. Operating frequencies above 3 GHz;

b. An average output power to mass ratio exceeding 80 W/kg; and

c. A volume of less than 400 cm³;

9. Microwave power modules (MPM) consisting of, at least, a travelling wave tube, a microwave "monolithic integrated circuit" and an integrated electronic power conditioner and having all of the following:

a. A 'turn-on time' from off to fully operational in less than 10 seconds;

b. A volume less than the maximum rated power in Watts multiplied by 10 cm³/W; and

c. An "instantaneous bandwidth" greater than 1 octave (fmax. > 2fmin.) and having any of the following:

1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or

2. A frequency greater than 18 GHz;

10. Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz;

a. A single sideband (SSB) phase noise, in dBc/Hz, better than -(126+20log10F-20log10f) anywhere in the range of 10 Hz < F < 10 kHz; and

b. A single sideband (SSB) phase noise, in dBc/Hz, better than -(114+20log10F-20log10f) anywhere in the range of 10 kHz ≤ F < 500 kHz;

11. "Frequency synthesiser" "electronic assemblies" having a "frequency switching time" as specified by any of the following:

a. Less than 156 ps;

b. Less than 100 μs for any frequency change exceeding 1,6 GHz within the synthesised frequency range exceeding 4,8 GHz but not exceeding 10,6 GHz;

c. Less than 250 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 10,6 GHz but not exceeding 31,8 GHz;

d. Less than 500 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31,8 GHz but not exceeding 43,5 GHz;

e. Less than 1 ms for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 43,5 GHz but not exceeding 56 GHz;

f. Less than 1 ms for any frequency change exceeding 2,2 GHz within the synthesized frequency range exceeding 56 GHz but not exceeding 90 GHz; or

g. Less than 1 ms within the synthesized frequency range exceeding 90 GHz;

c. Acoustic wave devices as follows and specially designed components therefor:

1. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following:

a. A carrier frequency exceeding 6 GHz;

b. A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following:

1. A 'frequency side-lobe rejection' exceeding 65 dB;

2. A product of the maximum delay time and the bandwidth (time in µs and bandwidth in MHz) of more than 100;

3. A bandwidth greater than 250 MHz; or

4. A dispersive delay of more than 10 µs; or

c. A carrier frequency of 1 GHz or less and having any of the following:

1. A product of the maximum delay time and the bandwidth (time in µs and bandwidth in MHz) of more than 100;

2. A dispersive delay of more than 10 µs; or

3. A 'frequency side-lobe rejection' exceeding 65 dB and a bandwidth greater than 100 MHz;

2. Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz;

3. Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;

d. Electronic devices and circuits containing components, manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following:

1. Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10E-14 J; or

2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10000;

e. High energy devices as follows:

1. Cells' as follows:

a. Primary cells' having an 'energy density' exceeding 550 Wh/kg at 20 °C;

b. Secondary cells' having an 'energy density' exceeding 350 Wh/kg at 20ºC;

2. High energy storage capacitors as follows:

a. Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 250 J/kg; and

3. A total energy equal to or more than 25 kJ;

b. Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following:

1. A voltage rating equal to or more than 5 kV;

2. An energy density equal to or more than 50 J/kg;

3. A total energy equal to or more than 100 J; and

4. A charge/discharge cycle life equal to or more than 10000;

3. "Superconductive" electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following:

a. Energy delivered during the discharge exceeding 10 kJ in the first second;

b. Inner diameter of the current carrying windings of more than 250 mm; and

c. Rated for a magnetic induction of more than 8 T or "overall current density" in the winding of more than 300 A/mm²;

4. Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are "space-qualified", having a minimum average efficiency exceeding 20 % at an operating temperature of 301 K (28 °C) under simulated "AM0" illumination with an irradiance of 1,367 watts per square metre (W/m²);

f. Rotary input type absolute position encoders having an "accuracy" equal to or less (better) than 1,0 second of arc;

g. Solid-state pulsed power switching thyristor devices and 'thyristor modules', using either electrically, optically, or electron radiation controlled switch methods and having any of the following:

1. A maximum turn-on current rate of rise (di/dt) greater than 30000 A/µs and off-state voltage greater than 1100 V; or

2. A maximum turn-on current rate of rise (di/dt) greater than 2000 A/µs and having both of the following:

a. An off-state peak voltage equal to or greater than 3000 V; and

b. A peak (surge) current equal to or greater than 3000 A.

h. Solid-state power semiconductor switches, diodes, or 'modules', having all of the following:

1. Rated for a maximum operating junction temperature greater than 488 K (215 °C);

2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and

3. Continuous current greater than 1 A.

3A002 General purpose "electronic assemblies", modules and equipment, as follows:

a. Recording equipment and oscilloscopes as follows:

1. Not used;

2. Not used;

3. Not used;

4. Not used;

5. Not used;

6. Digital data recorders having all of the following:

a. A sustained 'continuous throughput' of more than 6,4 Gbit/s to disk or solid-state drive memory; and

b. A processor that performs analysis of radio frequency signal data while it is being recorded;

7. Real-time oscilloscopes having a vertical root-mean-square (rms) noise voltage of less than 2% of full-scale at the vertical scale setting that provides the lowest noise value for any input 3dB bandwidth of 60 GHz or greater per channel;

b. Not used;

c. "Signal analysers" as follows:

1. "Signal analysers" having a 3 dB resolution bandwidth (RBW) exceeding 10 MHz anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz;

2. "Signal analysers" having Displayed Average Noise Level (DANL) less (better) than -150 dBm/Hz anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

3. "Signal analysers" having a frequency exceeding 90 GHz;

4. "Signal analysers" having all of the following:

a. "Real-time bandwidth" exceeding 170 MHz; and

b. 100% probability of discovery with less than a 3 dB reduction from full amplitude due to gaps or windowing effects of signals having a duration of 15 μs or less;

5. "Signal analysers" having a "frequency mask trigger" function with 100% probability of trigger (capture) for signals having a duration of 15 μs or less;

d. Signal generators having any of the following:

1. Specified to generate pulse-modulated signals having all of the following, anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz:

a. Pulse duration' of less than 25 ns; and

b. On/off ratio equal to or exceeding 65 dB;

2. An output power exceeding 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

3. A "frequency switching time" as specified by any of the following:

a. Not used;

b. Less than 100 µs for any frequency change exceeding 2,2GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz;

c. Not used;

d. Less than 500 µs for any frequency change exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; or

e. Less than 100 µs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 90 GHz;

f. Not used;

4. Single sideband (SSB) phase noise, in dBc/Hz, specified as being any of the following:

a. Less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 90 GHz; or

b. Less (better) than -(206- 20log10f) anywhere within the range of 10 kHz< F≤ 100 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 90 GHz; or

5. A maximum frequency exceeding 90 GHz;

e. Network analysers having any of the following:

1. An output power exceeding 31,62 mW (15 dBm) anywhere within the operating frequency range exceeding 43,5 GHz but not exceeding 90 GHz;

2. An output power exceeding 1 mW (0 dBm) anywhere within the operating frequency range exceeding 90 GHz but not exceeding 110 GHz;

3. Nonlinear vector measurement functionality' at frequencies exceeding 50 GHz but not exceeding 110 GHz; or

4. A maximum operating frequency exceeding 110 GHz;

f. Microwave test receivers having all of the following:

1. A maximum operating frequency exceeding 110 GHz; and

2. Being capable of measuring amplitude and phase simultaneously;

g. Atomic frequency standards being any of the following:

1. "Space-qualified";

2. Non-rubidium and having a long-term stability less (better) than 1 × 10E-11/month; or

3. Non-"space-qualified" and having all of the following:

a. Being a rubidium standard;

b. Long-term stability less (better) than 1 × 10E-11/month; and

c. Total power consumption of less than 1 W;

h. "Electronic assemblies", modules, or equipment, specified to perform all of the following:

1. Analogue-to-digital conversions meeting any of the following:

a. A resolution of 8 bit or more, but less than 10 bit, with an input sample rate greater than 1 300 million samples per second;

b. A resolution of 10 bit or more, but less than 12 bit, with an input sample rate greater than 1 000 million samples per second;

c. A resolution of 12 bit or more, but less than 14 bit, with an input sample rate greater than 1 000 million samples per second;

d. A resolution of 14 bit or more but less than 16 bit, with an input sample rate greater than 400 million samples per second; or

e. A resolution of 16 bit or more with an input sample rate greater than 180 million samples per second; and

2. Any of the following:

a. Output of digitized data;

b. Storage of digitized data; or

c. Processing of digitized data;

3A003 Spray cooling thermal management systems employing closed loop fluid handling and reconditioning equipment in a sealed enclosure where a dielectric fluid is sprayed onto electronic components using specially designed spray nozzles that are designed to maintain electronic components within their operating temperature range, and specially designed components therefor.

3A101 Electronic equipment, devices and components, other than those specified in 3A001, as follows:

a. Analogue-to-digital converters, usable in "missiles", designed to meet military specifications for ruggedized equipment;

b. Accelerators capable of delivering electromagnetic radiation produced by bremsstrahlung from accelerated electrons of 2 MeV or greater, and systems containing those accelerators.

3A102 Thermal batteries' designed or modified for 'missiles'.

3A201 Electronic components, other than those specified in 3A001, as follows;

a. Capacitors having either of the following sets of characteristics:

1. a. Voltage rating greater than 1,4 kV; b. Energy storage greater than 10 J; c. Capacitance greater than 0,5 ìF; and d. Series inductance less than 50 nH; or

2. a. Voltage rating greater than 750 V; b. Capacitance greater than 0,25 µF; and c. Series inductance less than 10 nH;

b. Superconducting solenoidal electromagnets

1. Capable of creating magnetic fields greater than 2 T;

2. A ratio of length to inner diameter greater than 2;

3. Inner diameter greater than 300 mm; and

4. Magnetic field uniform to better than 1 % over the central 50 % of the inner volume;

c. Flash X-ray generators or pulsed electron accelerators having either of the following sets of characteristics:

1. a. An accelerator peak electron energy of 500 keV or greater but less than 25 MeV; and b. With a 'figure of merit' (K) of 0,25 or greater; or

2. a. An accelerator peak electron energy of 25 MeV or greater; and b. A 'peak power' greater than 50 MW.

3A225 Frequency changers or generators, other than those specified in 0B001.b.13., usable as a variable or fixed frequency motor drive, having all of the following characteristics:

a. Multiphase output providing a power of 40 VA or greater;

b. Operating at a frequency of 600 Hz or more; and

c. Frequency control better (less) than 0,2%.

3A226 High-power direct current power supplies, other than those specified in 0B001.j.6., having both of the following characteristics:

a. Capable of continuously producing, over a time period of 8 hours, 100 V or greater with current output of 500 A or greater; and

b. Current or voltage stability better than 0,1 % over a time period of 8 hours.

3A227 High-voltage direct current power supplies, other than those specified in 0B001.j.5., having both of the following characteristics:

a. Capable of continuously producing, over a time period of 8 hours, 20 kV or greater with current output of 1 A or greater; and

b. Current or voltage stability better than 0,1 % over a time period of 8 hours.

3A228 Switching devices, as follows:

a. Cold-cathode tubes, whether gas filled or not, operating similarly to a spark gap, having all of the following characteristics:

1. Containing three or more electrodes;

2. Anode peak voltage rating of 2,5 kV or more;

3. Anode peak current rating of 100 A or more; and

4. Anode delay time of 10 µs or less;

b. Triggered spark-gaps having both of the following characteristics:

1. An anode delay time of 15 µs or less; and

2. Rated for a peak current of 500 A or more;

c. Modules or assemblies with a fast switching function, other than those specified in 3A001.g. or 3A001.h., having all of the following characteristics:

1. Anode peak voltage rating greater than 2 kV;

2. Anode peak current rating of 500 A or more; and

3. Turn-on time of 1 µs or less.

3A229 High-current pulse generators as follows:

a. Detonator firing sets (initiator systems, firesets), including electronically-charged, explosively-driven and optically-driven firing sets, other than those specified in 1A007.a., designed to drive multiple controlled detonators specified in 1A007.b.;

b. Modular electrical pulse generators (pulsers) having all of the following characteristics:

1. Designed for portable, mobile, or ruggedized-use;

2. Capable of delivering their energy in less than 15 μs into loads of less than 40 ohms;

3. Having an output greater than 100 A;

4. No dimension greater than 30 cm;

5. Weight less than 30 kg; and

6. Specified for use over an extended temperature range 223 K (-50ºC) to 373 K (100ºC) or specified as suitable for aerospace applications.

c. Micro-firing units having all of the following characteristics:

1. No dimension greater than 35 mm;

2. Voltage rating of equal to or greater than 1 kV; and

3. Capacitance of equal to or greater than 100 nF.

3A230 High-speed pulse generators, and 'pulse heads' therefor, having both of the following characteristics:

a. Output voltage greater than 6 V into a resistive load of less than 55 ohms, and

b. Pulse transition time' less than 500 ps.

3A231 Neutron generator systems, including tubes, having both of the following characteristics:

a. Designed for operation without an external vacuum system; and

b. Utilizing any of the following:

1. Electrostatic acceleration to induce a tritium-deuterium nuclear reaction; or

2. Electrostatic acceleration to induce a deuterium-deuterium nuclear reaction and capable of an output of 3 x 10E9 neutrons/s or greater.

3A232 Multipoint initiation systems, other than those specified in 1A007, as follows:

a. Not used;

b. Arrangements using single or multiple detonators designed to nearly simultaneously initiate an explosive surface over an area greater than 5 000 mm2 from a single firing signal with an initiation timing spread over the surface of less than 2,5 μs.

3A233 Mass spectrometers, other than those specified in 0B002.g., capable of measuring ions of 230 atomic mass units or greater and having a resolution of better than 2 parts in 230, as follows, and ion sources therefor:

a. Inductively coupled plasma mass spectrometers (ICP/MS);

b. Glow discharge mass spectrometers (GDMS);

c. Thermal ionization mass spectrometers (TIMS);

d. Electron bombardment mass spectrometers having both of the following features:

1. A molecular beam inlet system that injects a collimated beam of analyte molecules into a region of the ion source where the molecules are ionized by an electron beam; and

2. One or more 'cold traps' that can be cooled to a temperature of 193 K (-80 °C);

e. Not used;

f. Mass spectrometers equipped with a microfluorination ion source designed for actinides or actinide fluorides.

3A234 Striplines to provide low inductance path to detonators with the following characteristics:

a. Voltage rating greater than 2 kV; and

b. Inductance of less than 20 nH.

3B Test, Inspection and Production Equipment

3B001 Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor:

a. Equipment designed for epitaxial growth as follows:

1. Equipment capable of producing a layer of any material other than silicon with a thickness uniform to less than ± 2,5% across a distance of 75 mm or more;

2. Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, or nitrogen;

3. Molecular beam epitaxial growth equipment using gas or solid sources;

b. Equipment designed for ion implantation and having any of the following:

1. Not used;

2. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant;

3. Direct write capability;

4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or

5. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600°C or greater;

c. Not used;

d. Not used;

e. Automatic loading multi-chamber central wafer handling systems having all of the following:

1. Interfaces for wafer input and output, to which more than two functionally different 'semiconductor process tools' specified in 3B001.a.1., 3B001.a.2., 3B001.a.3 or 3B001.b. are designed to be connected; and

2. Designed to form an integrated system in a vacuum environment for 'sequential multiple wafer processing';

f. Lithography equipment as follows:

1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:

a. A light source wavelength shorter than 193 nm; or

b. Capable of producing a pattern with a 'Minimum Resolvable Feature size' (MRF) of 45 nm or less;

2. Imprint lithography equipment capable of producing features of 45 nm or less;

3. Equipment specially designed for mask making having all of the following:

a. Deflected focussed electron beam, ion beam or "laser" beam; and

b. Having any of the following:

1. A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or

2. Not used;

3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;

4. Equipment designed for device processing using direct writing methods, having all of the following:

a. A deflected focused electron beam; and

b. Having any of the following:

1. A minimum beam size equal to or smaller than 15 nm; or

2. An overlay error less than 27 nm (mean + 3 sigma);

g. Masks and reticles, designed for integrated circuits specified in 3A001;

h. Multi-layer masks with a phase shift layer;

1. Made on a mask "substrate blank" from glass specified as having less than 7 nm/cm birefringence; or

2. Designed to be used by lithography equipment having a light source wavelength less than 245 nm;

i. Imprint lithography templates designed for integrated circuits specified in 3A001.

3B002 Test equipment specially designed for testing finished or unfinished semiconductor devices as follows and specially designed components and accessories therefor:

a. For testing S-parameters of transistor devices at frequencies exceeding 31,8 GHz;

b. Not used;

c. For testing microwave integrated circuits specified in 3A001.b.2.

3C Materials

3C001 Hetero-epitaxial materials consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:

a. Silicon (Si);

b. Germanium (Ge);

c. Silicon carbide (SiC); or

d. "III/V compounds" of gallium or indium.

3C002 Resist materials as follows and "substrates" coated with the following resists:

a. Resists designed for semiconductor lithography as follows:

1. Positive resists adjusted (optimised) for use at wavelengths less than 245 nm but equal to or greater than 15 nm;

2. Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm;

b. All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 µcoulomb/mm² or better;

c. Not used;

d. All resists optimised for surface imaging technologies;

e. All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.

3C003 Organo-inorganic compounds as follows:

a. Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999%;

b. Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999%.

3C004 Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999%, even diluted in inert gases or hydrogen.

3C005 Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10 000 ohm-cm at 20ºC.

3C006 "Substrates" specified in 3C005 with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride.

3D Software

3D001 "Software" specially designed for the "development" or "production" of equipment specified in 3A001.b. to 3A002.h. or 3B.

3D002 "Software" specially designed for the "use" of equipment specified in 3B001.a. to f., 3B002 or 3A225

3D003 "Physics-based" simulation "software" specially designed for the "development" of lithographic, etching or deposition processes for translating masking patterns into specific topographical patterns in conductors, dielectrics or semiconductor materials.

3D004 "Software" specially designed for the "development" of equipment specified in 3A003.

3D101 "Software" specially designed or modified for the "use" of equipment specified in 3A101.b.

3D225 "Software" specially designed to enhance or release the performance of frequency changers or generators to meet the characteristics of 3A225.

3E Technology

3E001 "Technology" according to the General Technology Note for the "development" or "production" of equipment or materials specified in 3A, 3B or 3C;

3E002 "Technology" according to the General Technology Note, other than that specified in 3E001, for the "development" or "production" of a "microprocessor microcircuit", "microcomputer microcircuit" or microcontroller microcircuit core, having an arithmetic logic unit with an access width of 32 bits or more and any of the following features or characteristics:

a. A 'vector processor unit' designed to perform more than two calculations on floating-point vectors (one-dimensional arrays of 32-bit or larger numbers) simultaneously;

b. Designed to perform more than four 64-bit or larger floating-point operation results per cycle; or

c. Designed to perform more than eight 16-bit fixed-point multiply-accumulate results per cycle (e.g., digital manipulation of analogue information that has been previously converted into digital form, also known as digital "signal processing").

3E003 Other "technology" for the "development" or "production" of the following:

a. Vacuum microelectronic devices;

b. Hetero-structure semiconductor electronic devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices;

c. "Superconductive" electronic devices;

d. Substrates of films of diamond for electronic components;

e. Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;

f. Substrates of silicon carbide for electronic components;

g. Electronic vacuum tubes operating at frequencies of 31,8 GHz or higher.

3E101 "Technology" according to the General Technology Note for the "use" of equipment or "software" specified in 3A001.a.1. or 2., 3A101, 3A102 or 3D101.

3E102 "Technology" according to the General Technology Note for the "development" of "software" specified in 3D101.

3E201 "Technology" according to the General Technology Note for the "use" of equipment specified in 3A001.e.2., 3A001.e.3., 3A001.g., 3A201, 3A225 to 3A234.

3E225 "Technology", in the form of codes or keys, to enhance or release the performance of frequency changers or generators to meet the characteristics of 3A225.

General Notes

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Definition of Terms

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Images

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Reasons for Control

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CN Codes

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